IRFB5620PBF, Транзистор полевой MOSFET N-канальный 200В 25А 144Вт
Код товара: 203982
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Цена от:
160,18 руб.
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1+ 11+ 21+ 50+ 100+203,30 ₽ 188,54 ₽ 176,82 ₽ 167,28 ₽ 160,18 ₽Срок:В наличииНаличие:790Минимум:2Количество в заказ
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39+ 77+330,43 ₽ 310,83 ₽Срок:7 днейНаличие:300Минимум:Мин: 39Количество в заказ
Технические параметры
Описание IRFB5620PBF
The IRFB5620PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device. It can deliver up to 300W per channel into 8R load in half-bridge configuration amplifier. It is suitable for full-bridge and push-pull application.
• Low RDS (ON) for improved efficiency
• Low Qg and Qsw for better THD and improved efficiency
• Low QRR for better THD and lower EMI
| Структура | n-канал |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 0.0725 ом при 15a, 10в |
| Вес, г | 2.5 |
irfb5620pbf.pdf