IRFB5620PBF, Транзистор полевой MOSFET N-канальный 200В 25А 144Вт

Описание IRFB5620PBF

The IRFB5620PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device. It can deliver up to 300W per channel into 8R load in half-bridge configuration amplifier. It is suitable for full-bridge and push-pull application.

• Low RDS (ON) for improved efficiency
• Low Qg and Qsw for better THD and improved efficiency
• Low QRR for better THD and lower EMI

Структура	n-канал
Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on)	0.0725 ом при 15a, 10в
Вес, г	2.5