FQP55N10, Полевой транзистор, N-канальный, 100 В, 55 А
Код товара: 198617
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Технические параметры
Описание FQP55N10
QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor
Fairchild Semiconductor's new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
Структура | n-канал |
Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 0.026 ом при 27.5a, 10в |